transistor effect
英 [trænˈzɪstə(r) ɪˈfekt]
美 [trænˈzɪstər ɪˈfekt]
网络 晶体管效应
双语例句
- Party B shall complete the assembling of all transistor radios and effect shipment within the mutually agreed unless some unforeseen circumstances beyond control have occurred.
除不能预见的无法控制的情况外，乙方必须在双方约定的时期内完成晶体管收音机的装配和交货任务。 - The significance of understanding circuit symbols of transistor and field effect tube
巧识晶体管、场效应管电路符号的意义 - Urease-based field effect transistor biosensor has been fabricated by the transfer of urease/ amphiphile mixed Langmuir films onto ion-sensitive field effect transistor ( ISFET).
用LB膜技术将脲酶／两亲性分子混合Langmuir膜转移到离子敏感场效应晶体管（ISFET）表面，制成了脲酶场效应晶体管生物传感器； - By means of two dimensional numerical analysis, the temperature distribution of the transistor and the major factors influencing the temperature rising under the self heating effect are investigated.
以基本的Poison方程、电流方程及热流方程为基础，采用二维数值分析法，确定了器件内部自升温效应下的温度分布特点，以及决定器件自升温幅度的主要因素。 - The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.
用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。 - Such generator outputed current impulses of 7 ns wide and 6 A high from the two-stage avalanche transistor matrix using the avalanche effect.
利用晶体管的雪崩效应，通过两级雪崩晶体管阵列，得到了7ns、6A的大电流窄脉冲。 - The amorphous silicon thin film transistor ( a-Si: H TFT) structure for effectively suppressing backlight illumination effect is proposed in this paper.
提出一种能有效抑制背光照影响的非晶硅薄膜晶体管（a-Si：HTFT）结构。 - I-V characteristics of the heterojunction bipolar transistor ( HBT) are presented to account for self-heating effect of RF power HBT's.
从器件I-V特性的角度，表征了射频功率异质结双极晶体管（HBT）的自加热效应。 - Amorphous Silicon Thin Film Transistor Structure for Effectively Suppressing Backlight Illumination Effect
一种能有效抑制背光照影响的非晶硅薄膜晶体管 - Transistor blocking is investigated using hyperbolic function. A general expression is obtained showing the effect of interference on the useful output and methods of raising the blocking level are discussed.
本文用双曲线函数法研究了晶体管高频放大器的阻塞问题，推导了有用输出与干扰的一般关系式，讨论了提高阻塞电平的方法。 - Single-electron transistor has received extensive attention and intensive research in re-cent years by virtue of its advantages such as ultra-small geometry, ultra-low power dissipation, ultra-low operating voltage and ultra-high operating frequency based on the Coulomb bloc-kade and quantum size effect.
基于库仑阻塞效应和量子尺寸效应工作的单电子晶体管（SET）由于具有超小器件尺寸、超低功耗、超低工作电流和超高工作频率等特点，受到人们的重视和深入研究。 - Temperature compensate transistor has good compensate effect to sensitivity drift of the pulse image sensor, the results apply equally to other fields.
给出的温度补偿晶体管对该脉象传感器的灵敏度温度漂移补偿效果好，有推广应用前景。 - Based on the analyzing and studying carrier transport of SiGe HBT ( heterojunction bipolar transistor), a model of the emitter delay time τ_e, including base extending effect, is established.
在对SiGeHBT（异质结双极晶体管）载流子输运的研究基础上，建立了包括基区扩展效应SiGeHBT发射极延迟时间τe模型。 - A simple kind of field effect transistor self electrooptic effect device ( FET SEED) smart pixels has been fabricated by interconnecting SEEDs and GaAs FETs on a printed circuit board.
在一块印刷电路板上通过将自电光效应器件（SEED）与GaAs埸效应晶体管（FET）进行互连制作了一种简单的场效应晶体管－自电光效应器件（FET－SEED）灵巧像素。 - The Single Transistor Latch Effect of Thin Film Fully Depleted SOI MOSFET
薄膜全耗尽SOIMOSFET单晶体管Latch效应 - With the whole new method, simple calculation instead of the traditional measures which used to design low noise single-stage negative feedback amplifier, the relations among the transistor data, feedback effect, noise factor, as well as singal resistance are studied.
本文一改过去负反馈低噪声放大器的设计步骤，采用全新的方法&方框图法，确定了负反馈电路中晶体管参数，反馈深度、噪声系数、信号源内阻和工作频率之间的关系。 - Thin film transistor ( TFT) is one type of field effect transistors ( FET).
薄膜晶体管（TFT）是众多场效应晶体管（FET）中的一种。 - We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。 - A theoretical model is presented to determine the current dependence of base resistance RB ( IB) of bipolar transistor at high current, based on the effect of base conductivity modulation.
本文针对基极电阻随电流变化的实验事实，根据基区电导调制效应，提出了工作在大电流密度水平时，基极电阻RB（IB）的理论模型； - It is proved that the electric field in the effective base region is the main cause for the minority carrier to move. The output property of the transistor is almost the same as that of MOS field effect transistor.
证明了这种晶体管有效基区中的电场是载流子输运的主要机制，它的输出特性与MOS场效应管的输出特性相似。 - Numerical Analysis of Single Electron Transistor/ Field Effect Transistor Hybrid Memory Cell
单电子晶体管/场效应管混合存储单元数值分析 - The application scope of non-fully depletion SOI/ MOS transistor is restricted due to Kink effect.
非全耗尽SOI/MOS晶体管由于存在Kink效应而限制了它的应用范围。 - As designing technique of the digital system and manufacturing process of integrated circuit are improving, the kinds of faults caused by transistor defect have became a main effect to digital circuit, which bring a strong challenge to the traditional testing methods.
随着数字系统设计技术的发展和电路集成度的提高，由晶体管缺陷导致的各种故障对电路的影响也越来越大，这给传统的测试技术带来了严峻的挑战。 - The current gain is one of the most important parameters of bipolar junction transistors ( BJTs). The degradation of the current gain for transistor is significant and typical radiation damage effect.
电流增益是双极型晶体管的电性能参数中关键的参数，其衰减是双极型晶体管最显著同时也是最典型的辐射损伤效应。 - For the composition of the optocouplers with transistor output, the noise theory, radiation mechanism and radiation effect are expounded, establishing an irradiation noise test system.
针对晶体管输出型光电耦合器的结构组成，详细阐述了其噪声理论、辐照机理和辐照效应，建立了光电耦合器的辐照噪声测试系统。 - The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。 - Thin film transistor ( TFT) is a kind of field effect device, and it is composed of electrode layer, semiconductor layer and insulator layer.
薄膜晶体管（ThinFilmTransistor，TFT）是由电极层、半导体层和绝缘层组成的场效应器件。 - The high electronic mobility transistor is a Field Effect Transistor, which has a series of merits, such as high-frequency, low noise, high efficiency, and so on.
高电子迁移率晶体管是一种新型的场效应晶体管，具有高频率、低噪声、大功率等一系列的优点。